1N5805US/TR
DIODE GEN PURP 135V 1A D-5AManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology 1N5805US-TR is a general-purpose diode with a repetitive peak reverse voltage of 135V and an average rectified forward current of 1A. This surface mount component, housed in a D-5A (SQ-MELF, A) package, features a maximum forward voltage of 875mV at 1A. It offers a reverse leakage current of 1 µA at 125V and a typical capacitance of 25pF at 10V and 1MHz. The diode's reverse recovery time (trr) is rated at 25 ns, classifying it as a fast recovery diode. Operating across a junction temperature range of -65°C to 175°C, this device is suitable for applications in industrial and consumer electronics. The 1N5805US-TR is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, A |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 25 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 25pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | D-5A |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 135 V |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 1 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 125 V |
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