1N5804USE3/TR
DIODE GEN PURP 100V 1A A SQ-MELFManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology 1N5804USE3-TR is a general-purpose diode with a 100V reverse voltage rating and 1A average rectified current capability. This SQ-MELF packaged component features a forward voltage drop of 875mV at 1A and a reverse leakage current of 1 µA at 100V. With a reverse recovery time of 25 ns, it is categorized as a fast recovery diode. The capacitance at 10V and 1MHz is 25pF. Operating across a junction temperature range of -65°C to 175°C, this device is supplied in Tape & Reel packaging. Applications include power supplies, automotive, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, A |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 25 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 25pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | A, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 1 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 100 V |
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