1N5804US/TR
DIODE GEN PURP 100V 1A D-5AManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology 1N5804US-TR is a 1A, 100V general-purpose diode utilizing standard technology. This surface mount component, packaged in a D-5A (SQ-MELF, A), offers a forward voltage of 875 mV at 1A and a reverse leakage of 1 µA at 100V. With a reverse recovery time of 25 ns, it falls into the fast recovery category (<= 500ns, > 200mA Io). The device exhibits a capacitance of 25pF at 10V, 1MHz. Operating temperature range is from -65°C to 175°C. This component is supplied on tape and reel (TR). It finds application in power supplies, automotive electronics, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, A |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 25 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 25pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | D-5A |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 1 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 100 V |
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