1N5803US/TR
DIODE GEN PURP 80V 1A D-5AManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology's 1N5803US-TR is a general-purpose diode featuring an 80V reverse voltage and 1A average rectified forward current. This surface-mount component, housed in a SQ-MELF, A (D-5A) package, offers a fast recovery time of 25 ns. Its low forward voltage, 875 mV at 1A, and minimal reverse leakage current of 1 µA at 75V contribute to efficient operation. With a junction operating temperature range of -65°C to 175°C and a capacitance of 25pF at 10V and 1MHz, the 1N5803US-TR is suitable for applications in power supplies, switching power supplies, and general rectification across various industrial electronics. The component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, A |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 25 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 25pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | D-5A |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 80 V |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 1 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 75 V |
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