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1N5803US/TR

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1N5803US/TR

DIODE GEN PURP 80V 1A D-5A

Manufacturer: Microchip Technology

Categories: Single Diodes

Quality Control: Learn More

Microchip Technology's 1N5803US-TR is a general-purpose diode featuring an 80V reverse voltage and 1A average rectified forward current. This surface-mount component, housed in a SQ-MELF, A (D-5A) package, offers a fast recovery time of 25 ns. Its low forward voltage, 875 mV at 1A, and minimal reverse leakage current of 1 µA at 75V contribute to efficient operation. With a junction operating temperature range of -65°C to 175°C and a capacitance of 25pF at 10V and 1MHz, the 1N5803US-TR is suitable for applications in power supplies, switching power supplies, and general rectification across various industrial electronics. The component is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSQ-MELF, A
Mounting TypeSurface Mount
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)25 ns
TechnologyStandard
Capacitance @ Vr, F25pF @ 10V, 1MHz
Current - Average Rectified (Io)1A
Supplier Device PackageD-5A
Operating Temperature - Junction-65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)80 V
Voltage - Forward (Vf) (Max) @ If875 mV @ 1 A
Current - Reverse Leakage @ Vr1 µA @ 75 V

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