1N5712-1/TR
DIODE SCHOTTKY 20V 75MA DO35Manufacturer: Microchip Technology
Categories: Single Diodes
Quality Control: Learn More
Microchip Technology 1N5712-1-TR is a Schottky barrier diode designed for high-speed switching applications. This axial-leaded device, packaged in a DO-204AH (DO-35) case, offers a reverse voltage rating of 20V and a forward current handling capability of 75mA. Key specifications include a low forward voltage drop of 1V at 35mA and a minimal reverse leakage current of 150 nA at 16V. The diode exhibits a low capacitance of 2pF at 0V and 1MHz, contributing to its suitability for small signal applications. Operating across a wide junction temperature range of -65°C to 150°C, this component is commonly found in power supply circuits, RF detection, and general-purpose high-frequency rectification. The Tape & Reel (TR) packaging facilitates automated assembly processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-204AH, DO-35, Axial |
| Mounting Type | Through Hole |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Technology | Schottky |
| Capacitance @ Vr, F | 2pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 75mA |
| Supplier Device Package | DO-204AH (DO-35) |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 20 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 35 mA |
| Current - Reverse Leakage @ Vr | 150 nA @ 16 V |
Request a Quote
Clients Also Buy
JANTXV1N6628U/TR
DIODE GP 660V 1.75A SQ-MELF
JAN1N5623US/TR
DIODE GEN PURP 1KV 1A D-5A
JANTX1N5418US
DIODE GEN PURP 400V 3A D-5B
