1N5621
DIODE GEN PURP 800V 1A AXIALManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology's 1N5621 is a general-purpose axial diode engineered for demanding applications. This through-hole component offers a maximum DC reverse voltage (Vr) of 800V and an average rectified forward current (Io) of 1A. It features a fast recovery time (trr) of 300 ns, classifying it within the <500ns, >200mA (Io) speed category. Forward voltage (Vf) is a maximum of 1.6V at 3A, with a reverse leakage current of 500 nA at 800V. The diode exhibits a typical capacitance of 20pF at 12V and 1MHz. Operating junction temperatures range from -65°C to 175°C. The 1N5621 is commonly found in power supply rectification, general switching, and industrial control circuits. It is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | A, Axial |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 300 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 20pF @ 12V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | A, Axial |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 800 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 3 A |
| Current - Reverse Leakage @ Vr | 500 nA @ 800 V |
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