1N5619/TR
DIODE GEN PURP 600V 1AManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology's 1N5619-TR is a general-purpose diode with a 600V reverse voltage and 1A average rectified forward current (Io). This device features a fast recovery time (trr) of 250 ns, suitable for applications requiring switching speeds up to 500 ns. The diode exhibits a forward voltage drop (Vf) of 1.6V at 3A and a low leakage current of 500 nA at its maximum reverse voltage. With a junction operating temperature range of -65°C to 175°C, the 1N5619-TR is housed in an A, Axial package, supplied in tape and reel for automated assembly. Its typical capacitance at 12V and 1MHz is 25pF. This component finds application in power supply rectification, switching circuits, and general signal processing across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | A, Axial |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 250 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 25pF @ 12V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | A, Axial |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 3 A |
| Current - Reverse Leakage @ Vr | 500 nA @ 600 V |
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