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1N5616US/TR

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1N5616US/TR

DIODE GEN PURP 400V 1A D-5A

Manufacturer: Microchip Technology

Categories: Single Diodes

Quality Control: Learn More

Microchip Technology 1N5616US-TR is a general-purpose diode rated for 400V reverse voltage and 1A average rectified current. This surface mount component, housed in a SQ-MELF, A (D-5A) package, features a maximum forward voltage of 1.3V at 3A and a low reverse leakage of 500 nA at 400V. With a reverse recovery time of 2 µs, it falls into the standard recovery category. Operating across a junction temperature range of -65°C to 200°C, this diode is suitable for applications in industrial and consumer electronics. The product is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSQ-MELF, A
Mounting TypeSurface Mount
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)2 µs
TechnologyStandard
Capacitance @ Vr, F-
Current - Average Rectified (Io)1A
Supplier Device PackageD-5A
Operating Temperature - Junction-65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max)400 V
Voltage - Forward (Vf) (Max) @ If1.3 V @ 3 A
Current - Reverse Leakage @ Vr500 nA @ 400 V

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