1N5614US/TR
DIODE GEN PURP 200V 1A D-5AManufacturer: Microchip Technology
Categories: Single Diodes
Quality Control: Learn More
Microchip Technology's 1N5614US-TR is a general-purpose diode designed for demanding applications. This surface mount component, housed in a D-5A (SQ-MELF, A) package, offers a 200V reverse voltage rating and a 1A average rectified forward current capability. With a low reverse leakage of 500 nA at 200V and a forward voltage drop of 1.3V at 3A, it demonstrates efficient rectification. The diode features a standard recovery time of 2 µs. Operating across a wide junction temperature range of -65°C to 200°C, the 1N5614US-TR is suitable for use in industrial, automotive, and telecommunications sectors. The component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, A |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2 µs |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | D-5A |
| Operating Temperature - Junction | -65°C ~ 200°C |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 3 A |
| Current - Reverse Leakage @ Vr | 500 nA @ 200 V |
Request a Quote
Clients Also Buy
1N3600UR
DIODE GEN PURP 75V 300MA DO213AA
JANTX1N6874UTK2CS/TR
POWER SCHOTTKY
UFS110JE3/TR13
DIODE GEN PURP 100V 1A DO214BA
