1N5553US/TR
STD RECTIFIERManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology's 1N5553US-TR is a standard recovery rectifier diode designed for surface mount applications. This component features a maximum DC reverse voltage (Vr) of 800 V and a significant average rectified forward current (Io) of 3 A. The reverse leakage current at 800 V is a low 1 µA, ensuring efficient operation. With a forward voltage drop (Vf) of 1.2 V at 9 A, it offers robust performance. The SQ-MELF, B package is supplied on tape and reel for high-volume manufacturing. This device is suitable for applications requiring reliable rectification in power supply units, automotive electronics, and industrial control systems. Its operating temperature range is from -65°C to 175°C, and it exhibits a reverse recovery time (trr) of 2 µs.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, B |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2 µs |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | B, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 800 V |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 9 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 800 V |
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