1N5419US/TR
DIODE GEN PURP 500V 3A D-5BManufacturer: Microchip Technology
Categories: Single Diodes
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The Microchip Technology 1N5419US-TR is a general-purpose diode designed for demanding applications. This component features a maximum reverse voltage of 500 V and an average rectified current capability of 3 A. Its fast recovery time of 250 ns, coupled with a forward voltage drop of 1.5 V at 9 A, makes it suitable for power supply rectification, voltage clamping, and switching circuits. The diode exhibits a low reverse leakage current of 1 µA at 500 V, ensuring efficient operation. Housed in a SQ-MELF, E package (also known as D-5B), this surface mount device is supplied on tape and reel for automated assembly. It operates across a wide junction temperature range of -65°C to 175°C, finding use in industrial, automotive, and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, E |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 250 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | D-5B |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 500 V |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 9 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 500 V |
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