1N5419/TR
DIODE GEN PURP 500V 3A B SQ-MELFManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology's 1N5419-TR is a general-purpose diode designed for demanding applications. This SQ-MELF packaged device offers a 500 V reverse voltage and a 3 A average rectified current (Io). With a maximum forward voltage (Vf) of 1.5 V at 9 A and a reverse leakage current of just 1 µA at 500 V, it exhibits efficient operation. The diode features a fast recovery time of 250 ns, suitable for switching frequencies up to 200 mA (Io). Operating within a junction temperature range of -65°C to 175°C, this component finds utility in power supply rectification, general switching, and industrial control systems. The 1N5419-TR is supplied in Tape & Reel packaging for automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, B |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 250 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | B, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 500 V |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 9 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 500 V |
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