1N5417/TR
DIODE GEN PURP 200V 3A B AXIALManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology's 1N5417-TR is a general-purpose diode designed for demanding applications. This axial-packaged device features a maximum repetitive reverse voltage of 200V and a continuous average rectified forward current of 3A. With a fast recovery time of 150ns, it is suitable for applications requiring efficient switching. The diode exhibits a low leakage current of 1 µA at 200V and a forward voltage drop of 1.5V at 9A. Operating across a junction temperature range of -65°C to 175°C, the 1N5417-TR is commonly found in power supplies, industrial controls, and consumer electronics. Supplied on tape and reel (TR) for automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Axial |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 150 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | B, Axial |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 9 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 200 V |
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