1N5415US
DIODE GEN PURP 50V 3A D-5BManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology's 1N5415US is a general-purpose diode designed for high-reliability applications. This component features a 50V reverse voltage rating and a 3A average rectified current capability. The D-5B (SQ-MELF, E) surface mount package ensures efficient thermal management and board space optimization. With a maximum forward voltage of 1.5V at 9A and a reverse leakage of only 1 µA @ 50V, the 1N5415US offers robust performance. Its fast recovery time, rated at 150 ns, makes it suitable for power supply rectification, switching power circuits, and general rectification tasks across various industrial and consumer electronics sectors. The operating junction temperature range is from -65°C to 175°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, E |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 150 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | D-5B |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 9 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 50 V |
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