1N5182
DIODE GP 5KV 100MA S AXIALManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology 1N5182 is a high-voltage, general-purpose silicon rectifier diode. This through-hole component features a maximum DC reverse voltage (Vr) of 5000V and an average rectified forward current (Io) of 100mA. The reverse leakage current is a low 5 µA at 5000V. Forward voltage drop (Vf) is specified at a maximum of 10V when conducting 100mA. The operating junction temperature range is -65°C to 175°C. Packaged in a glass axial S case, this diode is suitable for applications requiring significant standoff voltage and low leakage, commonly found in power supplies, voltage multipliers, and specialized high-voltage circuitry across various industrial and scientific sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | S, Axial |
| Mounting Type | Through Hole |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 100mA |
| Supplier Device Package | S, Axial |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 5000 V |
| Voltage - Forward (Vf) (Max) @ If | 10 V @ 100 mA |
| Current - Reverse Leakage @ Vr | 5 µA @ 5000 V |
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