1N4449
DIODE GEN PURP 75V 200MA DO35Manufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology's 1N4449 is a general-purpose silicon rectifier diode with a reverse voltage rating of 75V and an average forward current of 200mA. This through-hole component, housed in a DO-204AH (DO-35) package, exhibits a low forward voltage drop of 1V maximum at 30mA and a reverse leakage current of 25nA at 20V. With a fast reverse recovery time of 4ns, the 1N4449 is suitable for high-speed switching applications. Its operating junction temperature range is -65°C to 150°C. This diode finds application in various industries including telecommunications, industrial control, and consumer electronics for rectification and signal switching functions.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | DO-204AH, DO-35, Axial |
| Mounting Type | Through Hole |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 4 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 200mA |
| Supplier Device Package | DO-204AH (DO-35) |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 75 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 30 mA |
| Current - Reverse Leakage @ Vr | 25 nA @ 20 V |
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