1N4305-1E3/TR
DIODE GEN PURP 50V 200MA DO35Manufacturer: Microchip Technology
Categories: Single Diodes
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The Microchip Technology 1N4305-1E3-TR is a general-purpose diode designed for a 50V reverse voltage rating and a 200mA average rectified forward current. This component features a low forward voltage drop of 850mV at 10mA and a reverse leakage current of 100nA at 50V. The device exhibits a fast reverse recovery time of 2ns, suitable for switching applications. Packaged in a DO-204AH (DO-35) axial package and supplied on tape and reel, it offers a through-hole mounting configuration. This diode is commonly utilized in power supplies, signal processing, and general rectification circuits across industrial and consumer electronics sectors. Its operating junction temperature range is -65°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-204AH, DO-35, Axial |
| Mounting Type | Through Hole |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 2 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 200mA |
| Supplier Device Package | DO-204AH (DO-35) |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 850 mV @ 10 mA |
| Current - Reverse Leakage @ Vr | 100 nA @ 50 V |
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