1N4248/TR
DIODE GEN PURP 800V 1AManufacturer: Microchip Technology
Categories: Single Diodes
Quality Control: Learn More
The Microchip Technology 1N4248-TR is a general-purpose rectifier diode with a maximum repetitive reverse voltage (Vr) of 800 V. It features an average rectified forward current (Io) of 1 A and a low reverse leakage current of 1 µA at 800 V. The diode exhibits a forward voltage drop (Vf) of 1.3 V at a forward current (If) of 3 A. With a reverse recovery time (trr) of 5 µs, this device is classified under standard recovery diodes. Its operating junction temperature range is from -65°C to 175°C. The 1N4248-TR is provided in an A, Axial package suitable for through-hole mounting and is supplied in tape and reel (TR) packaging. This component is commonly utilized in power supply rectification, voltage clamping, and general-purpose switching applications across industrial and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | A, Axial |
| Mounting Type | Through Hole |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 5 µs |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | A, Axial |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 800 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 3 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 800 V |
Request a Quote
Clients Also Buy
MBR40200PTE3/TU
DIODE SCHOTTKY 40A 200V TO-247AD
1N2057R
DIODE GP REV 200V 275A DO205AB
HSM390JE3/TR13
DIODE SCHOTTKY 90V 3A DO214AB
