1N413B
DIODE GEN PURP 200V 100A DO205AAManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology 1N413B is a high-current general-purpose diode designed for demanding applications. This stud-mount component, housed in a DO-205AA (DO-8) package, offers a continuous forward current of 100A and a peak repetitive reverse voltage of 200V. The 1N413B features a maximum forward voltage drop of 1.2V at 200A and a reverse leakage current of 50 µA at its maximum reverse voltage. With a standard recovery time exceeding 500ns, it is suitable for power rectification and switching applications across various industrial sectors including power supplies, motor control, and welding equipment. The device operates over an extended junction temperature range of -65°C to 200°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | DO-205AA, DO-8, Stud |
| Mounting Type | Stud Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 100A |
| Supplier Device Package | DO-205AA (DO-8) |
| Operating Temperature - Junction | -65°C ~ 200°C |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 200 A |
| Current - Reverse Leakage @ Vr | 50 µA @ 200 V |
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