1N3975
DIODE GEN PURP 800V 100A DO205AAManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology's 1N3975 is a general-purpose diode designed for high-power applications. This component features a maximum DC reverse voltage (Vr) of 800 V and an average rectified forward current (Io) of 100 A. The forward voltage drop (Vf) is specified at a maximum of 1.2 V at 200 A. With a reverse leakage current of 50 µA at 800 V, the 1N3975 offers efficient operation.
This diode utilizes standard recovery technology, with a speed classification of Standard Recovery >500ns, >200mA (Io). It is housed in a DO-205AA (DO-8) package, facilitating stud mounting for robust thermal management. The operating temperature range for the junction is -65°C to 200°C. Commonly found in power supply rectification, motor control, and welding equipment, the 1N3975 is a reliable choice for demanding industrial environments. The component is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | DO-205AA, DO-8, Stud |
| Mounting Type | Stud Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 100A |
| Supplier Device Package | DO-205AA (DO-8) |
| Operating Temperature - Junction | -65°C ~ 200°C |
| Voltage - DC Reverse (Vr) (Max) | 800 V |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 200 A |
| Current - Reverse Leakage @ Vr | 50 µA @ 800 V |
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