1N3660R
DIODE GEN PURP REV 100V 35A DO21Manufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology 1N3660R is a general-purpose rectifier diode featuring a 100V reverse voltage rating and a 35A average rectified current (Io). This device offers a low forward voltage drop of 1.1V at 35A and a reverse leakage current of 10 µA at 100V. The 1N3660R utilizes a standard recovery speed, with a typical time greater than 500ns for currents over 200mA. Its DO-208AA (DO-21) package is designed for press-fit mounting, ensuring robust mechanical and electrical connection. Operating across a junction temperature range of -65°C to 175°C, this diode is suitable for applications in power supplies, motor control, and industrial power conversion.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | DO-208AA |
| Mounting Type | Press Fit |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard, Reverse Polarity |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 35A |
| Supplier Device Package | DO-21 |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 35 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 100 V |
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