1N3660
DIODE GEN PURP 100V 35A DO21Manufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology's 1N3660 is a general-purpose diode with a 100V reverse voltage and 35A average rectified forward current. This standard recovery diode, featuring a Vf of 1.1V at 35A and a reverse leakage of 10 µA at 100V, is housed in a DO-208AA (DO-21) press-fit package. Operating across a junction temperature range of -65°C to 175°C, the 1N3660 is suitable for applications requiring robust current handling and reliability. It finds utility in power supplies, motor control, and industrial automation systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | DO-208AA |
| Mounting Type | Press Fit |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 35A |
| Supplier Device Package | DO-21 |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 35 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 100 V |
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