1N3649R
DIODE GEN PURP 800V DO203AAManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology 1N3649R is a general-purpose diode featuring an 800V reverse voltage rating. This stud-mount device utilizes standard recovery technology with a typical recovery time exceeding 500ns for currents over 200mA. The diode exhibits a maximum forward voltage of 2.2V at a forward current of 10A and a reverse leakage current of 5µA at its maximum reverse voltage. Packaged in a DO-203AA (DO-4) stud mount configuration, it operates within a junction temperature range of -65°C to 150°C. This component is suitable for applications in power supply rectification, voltage clamping, and general signal processing within industrial and power control systems. The device is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | DO-203AA, DO-4, Stud |
| Mounting Type | Stud Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard, Reverse Polarity |
| Capacitance @ Vr, F | - |
| Supplier Device Package | DO-203AA (DO-4) |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 800 V |
| Voltage - Forward (Vf) (Max) @ If | 2.2 V @ 10 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 800 V |
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