1N3611US/TR
DIODE GEN PURP 200V 1A A SQ-MELFManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology 1N3611US-TR is a general-purpose diode designed for demanding applications. This surface mount component, housed in an A, SQ-MELF package, offers a maximum DC reverse voltage of 200V and an average rectified forward current of 1A. It exhibits a low reverse leakage current of 1 µA at 200V and a forward voltage drop of 1.1V at 1A. The diode operates within a junction temperature range of -65°C to 175°C and features standard recovery characteristics ( >500ns, >200mA). This component is commonly utilized in automotive, industrial, and medical equipment where reliable rectification and voltage blocking are critical. The Tape & Reel (TR) packaging facilitates automated assembly processes.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, A |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | A, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 1 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 200 V |
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