1N3600/TR
DIODE GEN PURP 50V 200MA DO35Manufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology 1N3600-TR is a general-purpose diode designed for a maximum reverse voltage of 50V and an average rectified forward current of 200mA. This through-hole component, packaged in a DO-204AH (DO-35) case, features a forward voltage drop of 1V at 200mA and a low reverse leakage current of 100nA at 50V. The 1N3600-TR has a reverse recovery time of 4ns, making it suitable for a variety of applications including power supplies, signal processing, and general rectification within industrial and consumer electronics. Its operating junction temperature range is -65°C to 175°C. This component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-204AH, DO-35, Axial |
| Mounting Type | Through Hole |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 4 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 200mA |
| Supplier Device Package | DO-204AH (DO-35) |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 200 mA |
| Current - Reverse Leakage @ Vr | 100 nA @ 50 V |
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