1N2280
DIODE GEN PURP 1KV 6A DO5Manufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology's 1N2280 is a general-purpose diode designed for high voltage and current applications. This component features a maximum DC reverse voltage (Vr) of 1000 V and an average rectified forward current (Io) of 6 A. The forward voltage (Vf) is rated at 1.19 V at 90 A. Its reverse leakage current is a low 10 µA at 1000 V.
Engineered for standard recovery speeds exceeding 500 ns at 200 mA, the 1N2280 has a junction operating temperature range of -65°C to 200°C. The device is housed in a DO-5 (DO-203AB) stud mount package, facilitating robust thermal management. This diode is suitable for power supply rectification, industrial controls, and high-voltage power conversion systems. The 1N2280 is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | DO-203AB, DO-5, Stud |
| Mounting Type | Stud Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 5 µs |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 6A |
| Supplier Device Package | DO-5 (DO-203AB) |
| Operating Temperature - Junction | -65°C ~ 200°C |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 1.19 V @ 90 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 1000 V |
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