1N2157
DIODE GEN PURP 300V 25A DO5Manufacturer: Microchip Technology
Categories: Single Diodes
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The Microchip Technology 1N2157 is a general-purpose diode designed for high-power applications. This component features a maximum DC reverse voltage rating of 300V and a substantial average rectified forward current handling capability of 25A. Its forward voltage drop is specified at a maximum of 1.19V when conducting 90A. The diode exhibits a low reverse leakage current of 10 µA at 50V.
Engineered with standard recovery characteristics, the 1N2157 has a reverse recovery time (trr) of 5 µs. It is housed in a DO-203AB (DO-5) stud mount package, facilitating robust thermal management. The operating junction temperature range extends from -65°C to 200°C, making it suitable for demanding industrial environments. This device finds application in power rectification and switching circuits across various industries, including industrial power supplies, motor control, and welding equipment. The 1N2157 is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | DO-203AB, DO-5, Stud |
| Mounting Type | Stud Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 5 µs |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 25A |
| Supplier Device Package | DO-5 (DO-203AB) |
| Operating Temperature - Junction | -65°C ~ 200°C |
| Voltage - DC Reverse (Vr) (Max) | 300 V |
| Voltage - Forward (Vf) (Max) @ If | 1.19 V @ 90 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 50 V |