1N1613A
DIODE GEN PURP 100V 5A DO4Manufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology 1N1613A is a general-purpose silicon rectifier diode designed for high-reliability applications. This DO-4 (DO-203AA) stud mount component offers a maximum repetitive peak reverse voltage of 100V and a continuous average forward current handling capability of 5A. The diode exhibits a low reverse leakage current of 10 µA at 100V and a forward voltage drop of 1.3V at 30A. Featuring standard recovery speed with a time constant greater than 500ns for currents over 200mA, the 1N1613A operates across a wide junction temperature range of -65°C to 200°C. This device is commonly utilized in power supply rectification, voltage clamping, and general power switching circuits within industrial and heavy equipment sectors. It is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | DO-203AA, DO-4, Stud |
| Mounting Type | Stud Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 5A |
| Supplier Device Package | DO-4 (DO-203AA) |
| Operating Temperature - Junction | -65°C ~ 200°C |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 30 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 100 V |
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