1N1612A
DIODE GEN PURP 50V 5A DO4Manufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology's 1N1612A is a general-purpose, standard recovery diode designed for high-current applications. This component features a 50V reverse voltage rating and an average rectified forward current capability of 5A. The low reverse leakage current is specified at 10 µA at 50V. With a forward voltage drop of 1.3V at 30A, this diode is suitable for power supply rectification, voltage clamping, and general-purpose switching in industrial and automotive systems. The 1N1612A is housed in a DO-4 (DO-203AA) stud mount package, allowing for efficient thermal management across its operating temperature range of -65°C to 200°C. This bulk-packaged device offers standard recovery speeds exceeding 500ns.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | DO-203AA, DO-4, Stud |
| Mounting Type | Stud Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 5A |
| Supplier Device Package | DO-4 (DO-203AA) |
| Operating Temperature - Junction | -65°C ~ 200°C |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 30 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 50 V |
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