MSR2N3637UB/TR
SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's MSR2N3637UB-TR is a PNP bipolar junction transistor (BJT) designed for demanding applications. This component features a high collector-emitter breakdown voltage of 175V and a maximum collector current of 1A, with a power dissipation capability of 1W. The transistor exhibits a minimum DC current gain (hFE) of 100 at 50mA collector current and 10V collector-emitter voltage. It includes a Vce(sat) specification of 600mV at 5mA base current and 50mA collector current. The MSR2N3637UB-TR operates within an extended temperature range of -65°C to 200°C (TJ) and is qualified to MIL-PRF-19500/357, indicating its suitability for military and high-reliability environments. Packaged in a UB (3-SMD, No Lead) surface mount configuration and supplied on tape and reel, this device is commonly utilized in aerospace, defense, and industrial control systems requiring robust small-signal amplification and switching.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 175 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/357 |
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