MSR2N2369AUA/TR
RH SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's MSR2N2369AUA-TR is an NPN bipolar junction transistor (BJT) designed for demanding applications. This surface mount device, packaged in a 4-SMD, No Lead UA configuration, offers a collector-emitter breakdown voltage of 15 V. It features a maximum power dissipation of 360 mW and operates across a wide temperature range of -65°C to 200°C (TJ). The MSR2N2369AUA-TR exhibits a minimum DC current gain (hFE) of 40 at 10mA collector current and 1V Vce, with a Vce(sat) of 250mV at 3mA base current and 30mA collector current. The collector cutoff current is a maximum of 400nA. This component is qualified to MIL-PRF-19500, indicating its suitability for military and other high-reliability applications. It is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 3mA, 30mA |
| Current - Collector Cutoff (Max) | 400nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | UA |
| Grade | Military |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
| Power - Max | 360 mW |
| Qualification | MIL-PRF-19500 |