MNS2N2907AUBP/TR
TRANS PNP 60V 0.6A UBManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology MNS2N2907AUBP-TR is a PNP Bipolar Junction Transistor (BJT) designed for demanding applications. This component offers a 60V collector-emitter breakdown voltage and a continuous collector current capability of 600mA. It features a maximum power dissipation of 500mW and a saturation voltage of 1.6V at 50mA collector current and 50mA base current. The transistor exhibits a minimum DC current gain (hFE) of 100 at 150mA collector current and 10V collector-emitter voltage. With a cutoff current of 50nA, it provides reliable switching performance. This device is qualified to MIL-PRF-19500/291, indicating its suitability for military and high-reliability applications. It is supplied in a UB (3-SMD, No Lead) surface mount package and operates across an extended temperature range of -65°C to 200°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/291 |
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