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MNS2N2907AUBP/TR

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MNS2N2907AUBP/TR

TRANS PNP 60V 0.6A UB

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology MNS2N2907AUBP-TR is a PNP Bipolar Junction Transistor (BJT) designed for demanding applications. This component offers a 60V collector-emitter breakdown voltage and a continuous collector current capability of 600mA. It features a maximum power dissipation of 500mW and a saturation voltage of 1.6V at 50mA collector current and 50mA base current. The transistor exhibits a minimum DC current gain (hFE) of 100 at 150mA collector current and 10V collector-emitter voltage. With a cutoff current of 50nA, it provides reliable switching performance. This device is qualified to MIL-PRF-19500/291, indicating its suitability for military and high-reliability applications. It is supplied in a UB (3-SMD, No Lead) surface mount package and operates across an extended temperature range of -65°C to 200°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / Case3-SMD, No Lead
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)50nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageUB
GradeMilitary
Current - Collector (Ic) (Max)600 mA
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max500 mW
QualificationMIL-PRF-19500/291

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