JANTXVR2N2222AUB/TR
RH SMALL-SIGNAL BJT _ UBManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's JANTXVR2N2222AUB-TR is an NPN bipolar junction transistor designed for demanding applications. This surface mount component, packaged in a 3-SMD, No Lead UB configuration on a Tape & Reel (TR), features a collector-emitter breakdown voltage of 50V and handles a continuous collector current of up to 800mA. It offers a maximum power dissipation of 500mW and a minimum DC current gain (hFE) of 100 at 150mA and 10V. The operating temperature range is specified from -65°C to 200°C (TJ). This device meets MIL-PRF-19500/255 qualification, making it suitable for military and high-reliability aerospace applications. The transistor exhibits a Vce(sat) of 1V at 50mA/500mA and a collector cutoff current of 50nA.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/255 |
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