JANTXV2N6546
TRANS NPN 300V 15A TO204AAManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTXV2N6546 is an NPN bipolar junction transistor (BJT) designed for high-reliability applications. This device features a maximum collector-emitter breakdown voltage of 300 V and a continuous collector current capability of 15 A, with a maximum power dissipation of 175 W. The DC current gain (hFE) is a minimum of 12 at 5 A collector current and 2 V collector-emitter voltage. The saturation voltage (Vce Sat) is specified at a maximum of 5 V for a base current of 3 A driving a 15 A collector current. Operating temperature ranges from -65°C to 200°C (TJ). This component is packaged in a TO-204AA (TO-3) metal can for through-hole mounting and is qualified to MIL-PRF-19500/525, indicating its suitability for demanding military and aerospace environments.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 5V @ 3A, 15A |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 12 @ 5A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AA (TO-3) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 15 A |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 175 W |
| Qualification | MIL-PRF-19500/525 |