JANTXV2N6384
TRANS NPN DARL 60V 10A TO204AAManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's JANTXV2N6384 is an NPN Darlington bipolar junction transistor designed for high-power switching applications. This component features a 60V collector-emitter breakdown voltage and a maximum collector current of 10A. It offers a substantial DC current gain (hFE) of 1000 minimum at 5A collector current and 3V Vce. The saturation voltage (Vce Sat) is a maximum of 3V at 100mA base current and 10A collector current. With a maximum power dissipation of 6W, this device is housed in a TO-204AA (TO-3) through-hole package, ensuring robust thermal performance. The JANTXV2N6384 meets MIL-PRF-19500/523 qualification, making it suitable for demanding military and industrial environments. Its operating temperature range is -55°C to 175°C (TJ). This transistor is commonly utilized in power supplies, motor control, and voltage regulation circuits.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 100mA, 10A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AA (TO-3) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 6 W |
| Qualification | MIL-PRF-19500/523 |