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JANTXV2N6384

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JANTXV2N6384

TRANS NPN DARL 60V 10A TO204AA

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology's JANTXV2N6384 is an NPN Darlington bipolar junction transistor designed for high-power switching applications. This component features a 60V collector-emitter breakdown voltage and a maximum collector current of 10A. It offers a substantial DC current gain (hFE) of 1000 minimum at 5A collector current and 3V Vce. The saturation voltage (Vce Sat) is a maximum of 3V at 100mA base current and 10A collector current. With a maximum power dissipation of 6W, this device is housed in a TO-204AA (TO-3) through-hole package, ensuring robust thermal performance. The JANTXV2N6384 meets MIL-PRF-19500/523 qualification, making it suitable for demanding military and industrial environments. Its operating temperature range is -55°C to 175°C (TJ). This transistor is commonly utilized in power supplies, motor control, and voltage regulation circuits.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-204AA, TO-3
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature-55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic3V @ 100mA, 10A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 5A, 3V
Frequency - Transition-
Supplier Device PackageTO-204AA (TO-3)
GradeMilitary
Current - Collector (Ic) (Max)10 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max6 W
QualificationMIL-PRF-19500/523

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