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JANTXV2N6383

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JANTXV2N6383

TRANS NPN DARL 40V 10A TO204AA

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANTXV2N6383 is a high-reliability NPN Darlington bipolar transistor. This component is rated for a collector-emitter breakdown voltage of 40V and a continuous collector current of up to 10A. Featuring a minimum DC current gain (hFE) of 1000 at 5A and 3V, it offers significant amplification capabilities. The transistor is housed in a TO-204AA (TO-3) package, suitable for through-hole mounting, and supports a maximum power dissipation of 6W. With an operating temperature range of -55°C to 175°C and MIL-PRF-19500/523 qualification, the JANTXV2N6383 is designed for demanding applications in sectors such as aerospace and defense. The saturation voltage (Vce Sat) is a maximum of 3V at 100mA base current and 10A collector current.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-204AA, TO-3
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature-55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic3V @ 100mA, 10A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 5A, 3V
Frequency - Transition-
Supplier Device PackageTO-204AA (TO-3)
GradeMilitary
Current - Collector (Ic) (Max)10 A
Voltage - Collector Emitter Breakdown (Max)40 V
Power - Max6 W
QualificationMIL-PRF-19500/523

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