JANTXV2N6341
TRANS NPN 150V 25A TO3Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTXV2N6341 is an NPN bipolar junction transistor (BJT) designed for high-power switching and amplification applications. This device features a 150V collector-emitter breakdown voltage and a maximum collector current capability of 25A, dissipating up to 200W. The JANTXV2N6341 is qualified to MIL-PRF-19500/509, indicating its suitability for demanding military and aerospace environments. Its TO-3 (TO-204AA) package with through-hole mounting facilitates robust thermal management and reliable board integration. Key parameters include a minimum DC current gain (hFE) of 30 at 10A and 2V, and a saturation voltage (Vce Sat) of 1.8V at 2.5A/25A. The operating temperature range is -65°C to 175°C (TJ). This component is commonly utilized in power supply regulation, motor control, and audio amplification circuits.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.8V @ 2.5A, 25A |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-3 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 25 A |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 200 W |
| Qualification | MIL-PRF-19500/509 |
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