JANTXV2N6338
TRANS NPN 100V 25A TO3Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTXV2N6338 is an NPN bipolar junction transistor (BJT) designed for high-power applications. This component features a 100V collector-emitter breakdown voltage and a maximum collector current of 25A. With a minimum DC current gain (hFE) of 30 at 10A and 2V, it offers robust amplification characteristics. The transistor dissipates up to 200W and has a low saturation voltage of 1.8V at 2.5A collector current. Qualified to MIL-PRF-19500/509, this device is suitable for demanding military and industrial environments, operating across a temperature range of -65°C to 200°C. It is provided in a TO-3 package for through-hole mounting.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.8V @ 2.5A, 25A |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-3 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 25 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 200 W |
| Qualification | MIL-PRF-19500/509 |