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JANTXV2N6301P

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JANTXV2N6301P

POWER BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

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Microchip Technology JANTXV2N6301P is an NPN-Darlington power bipolar junction transistor. This component features a 80V collector-emitter breakdown voltage and a continuous collector current rating of 8A, with a maximum power dissipation of 75W. The JANTXV2N6301P exhibits a minimum DC current gain (hFE) of 750 at 4A and 3V. Saturation voltage at 8A collector current and 80mA base current is a maximum of 3V. The device is housed in a TO-66 (TO-213AA) through-hole package, suitable for demanding applications. Its operating temperature range is -55°C to 200°C (TJ). This transistor is commonly utilized in power switching, motor control, and general-purpose amplification circuits across various industrial and defense sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-213AA, TO-66-2
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature-55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic3V @ 80mA, 8A
Current - Collector Cutoff (Max)500µA
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 4A, 3V
Frequency - Transition-
Supplier Device PackageTO-66 (TO-213AA)
Current - Collector (Ic) (Max)8 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max75 W

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