JANTXV2N6301P
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTXV2N6301P is an NPN-Darlington power bipolar junction transistor. This component features a 80V collector-emitter breakdown voltage and a continuous collector current rating of 8A, with a maximum power dissipation of 75W. The JANTXV2N6301P exhibits a minimum DC current gain (hFE) of 750 at 4A and 3V. Saturation voltage at 8A collector current and 80mA base current is a maximum of 3V. The device is housed in a TO-66 (TO-213AA) through-hole package, suitable for demanding applications. Its operating temperature range is -55°C to 200°C (TJ). This transistor is commonly utilized in power switching, motor control, and general-purpose amplification circuits across various industrial and defense sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 80mA, 8A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 4A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 75 W |