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JANTXV2N6301

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JANTXV2N6301

TRANS PNP DARL 80V 8A TO66

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANTXV2N6301 PNP Darlington bipolar transistor. This component features an 80V collector-emitter breakdown voltage and a maximum continuous collector current of 8A. With a power dissipation capability of 75W and a minimum DC current gain (hFE) of 750 at 4A and 3V, it is suited for high-reliability applications. The device operates within a temperature range of -55°C to 200°C (TJ) and is housed in a TO-66 package. Qualification to MIL-PRF-19500/539 signifies its suitability for stringent military and aerospace demands. This transistor is commonly employed in power switching and amplification circuits across various industrial sectors.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-213AA, TO-66-2
Mounting TypeThrough Hole
Transistor TypePNP - Darlington
Operating Temperature-55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic3V @ 80mA, 8A
Current - Collector Cutoff (Max)500µA
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 4A, 3V
Frequency - Transition-
Supplier Device PackageTO-66
GradeMilitary
Current - Collector (Ic) (Max)8 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max75 W
QualificationMIL-PRF-19500/539

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