JANTXV2N6299P
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTXV2N6299P is a high-power PNP Darlington bipolar junction transistor designed for demanding applications. This component offers a collector-emitter breakdown voltage of 80 V and a maximum continuous collector current of 8 A, with a power dissipation rating of 64 W. The transistor type is PNP-Darlington, featuring a minimum DC current gain (hFE) of 750 at 4 A and 3 V. It exhibits a Vce(sat) of 2 V at 80 mA and 8 A, and a collector cutoff current (Ic) max of 500 µA. The JANTXV2N6299P is housed in a TO-66 (TO-213AA) through-hole package, suitable for mounting in through-hole configurations. Operating temperature range is -65°C to 175°C. This component finds application in power switching and amplification circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Darlington |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 80mA, 8A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 4A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 64 W |