JANTXV2N6284
NPN TRANSISTORManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTXV2N6284 is an NPN bipolar junction transistor, specifically a Darlington configuration. This component is qualified to MIL-PRF-19500/504, indicating its suitability for demanding military applications. It features a 100 V collector-emitter breakdown voltage and a maximum collector current of 20 A, with a substantial power dissipation of 175 W. The transistor exhibits a high DC current gain (hFE) of 1500 minimum at 1 A and 3 V. Saturation voltage (Vce(sat)) is specified at a maximum of 3 V for 200 mA base current and 20 A collector current. The JANTXV2N6284 is housed in a TO-204AA (TO-3) through-hole package, designed for robust thermal management. Operating temperature range is from -65°C to 200°C. This component finds use in power switching and amplification circuits within aerospace, defense, and industrial sectors requiring high reliability and performance.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 200mA, 20A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1500 @ 1A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AA (TO-3) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 175 W |
| Qualification | MIL-PRF-19500/504 |