JANTXV2N6274
TRANS NPN 100V 50A TO3Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTXV2N6274 is an NPN bipolar junction transistor (BJT) designed for high-power applications. This military-grade component, qualified to MIL-PRF-19500/514, features a 100V collector-emitter breakdown voltage and a maximum collector current of 50A. It offers a significant power dissipation capability of 250W, with a low saturation voltage of 3V at 10A/50A. The DC current gain (hFE) is a minimum of 30 at 20A and 4V. Packaged in the industry-standard TO-3 (TO-204AA) through-hole package, the JANTXV2N6274 is suitable for demanding environments with an operating temperature range of -65°C to 200°C. This device finds application in power switching, voltage regulation, and amplification circuits within aerospace, defense, and industrial sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 10A, 50A |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 20A, 4V |
| Frequency - Transition | - |
| Supplier Device Package | TO-3 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 250 W |
| Qualification | MIL-PRF-19500/514 |
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