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JANTXV2N6274

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JANTXV2N6274

TRANS NPN 100V 50A TO3

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANTXV2N6274 is an NPN bipolar junction transistor (BJT) designed for high-power applications. This military-grade component, qualified to MIL-PRF-19500/514, features a 100V collector-emitter breakdown voltage and a maximum collector current of 50A. It offers a significant power dissipation capability of 250W, with a low saturation voltage of 3V at 10A/50A. The DC current gain (hFE) is a minimum of 30 at 20A and 4V. Packaged in the industry-standard TO-3 (TO-204AA) through-hole package, the JANTXV2N6274 is suitable for demanding environments with an operating temperature range of -65°C to 200°C. This device finds application in power switching, voltage regulation, and amplification circuits within aerospace, defense, and industrial sectors.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-204AA, TO-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic3V @ 10A, 50A
Current - Collector Cutoff (Max)50µA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 20A, 4V
Frequency - Transition-
Supplier Device PackageTO-3
GradeMilitary
Current - Collector (Ic) (Max)50 A
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max250 W
QualificationMIL-PRF-19500/514

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