JANTXV2N6059
TRANS NPN DARL 100V 12A TO3Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTXV2N6059 is an NPN Darlington bipolar transistor designed for high-power switching applications. This device features a 100V collector-emitter breakdown voltage and a continuous collector current capability of 12A, with a maximum power dissipation of 150W. The high DC current gain (hFE) of 1000 minimum at 6A and 3V Vce ensures efficient amplification. Saturation voltage is specified at 3V maximum for 120mA base current and 12A collector current. The JANTXV2N6059 is housed in a TO-3 (TO-204AA) package, suitable for through-hole mounting. This military-grade component, qualified to MIL-PRF-19500/502, operates across a wide temperature range of -55°C to 175°C. It finds application in power supply regulation, motor control, and other demanding industrial and defense systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 120mA, 12A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 6A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-3 (TO-204AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 12 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 150 W |
| Qualification | MIL-PRF-19500/502 |
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