JANTXV2N6058
TRANS NPN DARL 80V 12A TO3Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTXV2N6058 is an NPN Darlington bipolar transistor designed for demanding applications. This component features a 80 V collector-emitter breakdown voltage and a maximum continuous collector current of 12 A, with a power dissipation capability of 150 W. Achieving a minimum DC current gain (hFE) of 1000 at 6 A and 3 V, it offers significant amplification. The saturation voltage (Vce Sat) is a maximum of 3 V at 120 mA base current and 12 A collector current. This through-hole device is packaged in a TO-3 (TO-204AA) metal can, suitable for robust thermal management. Qualified to MIL-PRF-19500/502, it operates across a temperature range of -55°C to 175°C (TJ). This transistor is utilized in power switching, motor control, and power supply applications where high current gain and voltage handling are critical.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 120mA, 12A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 6A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-3 (TO-204AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 12 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 150 W |
| Qualification | MIL-PRF-19500/502 |