JANTXV2N6052
TRANS PNP DARL 100V 12A TO3Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTXV2N6052 is a PNP Darlington bipolar junction transistor. This component features a collector-emitter breakdown voltage of 100 V and a maximum continuous collector current of 12 A. With a high DC current gain (hFE) of 1000 minimum at 6 A and 3 V, and a power dissipation rating of 150 W, it is suitable for high-power switching and amplification applications. The device exhibits a Vce saturation of 3 V maximum at 120 mA base current and 12 A collector current. Its TO-204AA (TO-3) through-hole package and military-grade qualification (MIL-PRF-19500/501) make it robust for demanding environments in aerospace and defense industries. The operating temperature range is -55°C to 175°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Darlington |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 120mA, 12A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 6A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-3 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 12 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 150 W |
| Qualification | MIL-PRF-19500/501 |
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