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JANTXV2N6051

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JANTXV2N6051

TRANS PNP DARL 80V 12A TO3

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JANTXV2N6051 is a PNP Darlington bipolar transistor designed for demanding applications. This component features a high collector current capability of 12A and a maximum collector-emitter breakdown voltage of 80V. With a significant power dissipation rating of 150W and a low saturation voltage of 3V at 12A, it is suitable for power switching and amplification tasks. The device boasts a minimum DC current gain (hFE) of 1000 at 6A and 3V. Qualified to MIL-PRF-19500/501, it operates across a wide temperature range of -55°C to 175°C (TJ) and is housed in a TO-3 (TO-204AA) package, ideal for through-hole mounting. This transistor is commonly found in aerospace, defense, and high-reliability industrial systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-3
Mounting TypeThrough Hole
Transistor TypePNP - Darlington
Operating Temperature-55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic3V @ 120mA, 12A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 6A, 3V
Frequency - Transition-
Supplier Device PackageTO-3 (TO-204AA)
GradeMilitary
Current - Collector (Ic) (Max)12 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max150 W
QualificationMIL-PRF-19500/501

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