JANTXV2N6033
TRANS NPN 120V 40A TO3Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTXV2N6033 is an NPN bipolar junction transistor (BJT) designed for high-power applications. This component features a Collector-Emitter Breakdown Voltage (Vce(max)) of 120V and a continuous Collector Current (Ic(max)) of 40A, with a maximum power dissipation of 140W. The minimum DC Current Gain (hFE) is specified at 10 at 40A and 2V. It offers a low Collector Cutoff Current (Icbo) of 25mA. The JANTXV2N6033 is qualified to MIL-PRF-19500/528, indicating its suitability for demanding military applications. Housed in a TO-204AA (TO-3) package for efficient heat dissipation, this transistor is suitable for power switching and amplification circuits in industrial, automotive, and defense sectors. It operates within an extended temperature range of -65°C to 200°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TA) |
| Current - Collector Cutoff (Max) | 25mA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 40A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-3 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| Power - Max | 140 W |
| Qualification | MIL-PRF-19500/528 |