JANTXV2N5686
TRANS NPN 80V 50A TO3Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTXV2N5686 is an NPN Bipolar Junction Transistor (BJT) designed for high-power, high-current applications. This through-hole component, housed in a TO-3 (TO-204AE) package, offers a maximum collector-emitter breakdown voltage of 80V and a continuous collector current capability of 50A, with a maximum power dissipation of 300W. Featuring a minimum DC current gain (hFE) of 15 at 25A and 2V, and a saturation voltage (Vce(sat)) of 5V at 10A and 50A, it is suitable for demanding switching and amplification tasks. The JANTXV2N5686 meets MIL-PRF-19500/464 qualification, indicating its suitability for military and aerospace applications, as well as industrial power control and high-reliability systems. It operates within an extended temperature range of -55°C to 200°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AE |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 5V @ 10A, 50A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 25A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-3 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 300 W |
| Qualification | MIL-PRF-19500/464 |
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