JANTXV2N5683
TRANS NPN 60V 50A TO3Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JANTXV2N5683 is an NPN bipolar junction transistor (BJT) designed for demanding applications. This military-grade component, qualified to MIL-PRF-19500/466, features a robust TO-204AA (TO-3) package for through-hole mounting. It offers a maximum collector current (Ic) of 50 A and a collector-emitter breakdown voltage (Vce) of 60 V, with a maximum power dissipation of 300 W. The device exhibits a minimum DC current gain (hFE) of 15 at 25 A and 2 V. Saturation voltage (Vce(sat)) is specified at a maximum of 5 V for 10 A base current and 50 A collector current. Operating temperature ranges from -65°C to 200°C. This transistor is suitable for use in defense, aerospace, and high-power industrial systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 5V @ 10A, 50A |
| Current - Collector Cutoff (Max) | 5µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 25A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-3 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 300 W |
| Qualification | MIL-PRF-19500/466 |
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